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TP65H070LDG, TP65H070L 650V GaN FET

TP65H070LDG Description

TP65H070L Series 650V GaN FET PQFN Series Preliminary .
The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.

TP65H070LDG Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Ha

TP65H070LDG Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor Key Specifications VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* 650 800 85 QRR (nC) typ 90 QG (nC) typ 10
* Dynamic on-resistance; see Figures 5 and 6 Cascode Schematic Symbol February 17, 2019 tp65h070l.0 Casco

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: TP65H070LDG, TP65H070L. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
TP65H070LDG, TP65H070L
Manufacturer
Transphorm
File Size
1.04 MB
Datasheet
TP65H070L-Transphorm.pdf
Description
650V GaN FET
Note
This datasheet PDF includes multiple part numbers: TP65H070LDG, TP65H070L.
Please refer to the document for exact specifications by model.

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650V GaN FET Transphorm
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