TP65H050BS GaN FET

Description

TP65H050BS 650V GaN FET in TO-263 (source tab) Preliminary Datasheet .
The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device.

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Datasheet Specifications

Part number: TP65H050BS
Manufacturer: Transphorm
File Size: 1.69 MB
Datasheet: TP65H050BS-Transphorm.pdf
Description: GaN FET

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Ha

Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor Key Specifications VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* 650 800 60 QRR (nC) typ 125 QG (nC) typ 16
* Dynamic on-resistance; see Figures 14 and 15 Cascode Schematic Symbol August 18, 2018 tp65h050bs.0 Cas

TP65H050BS Distributors

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TP65H050BS GaN FET Transphorm

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