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TP65H050G4YS 650V FET

TP65H050G4YS Description

Specifications in this document are tentative and subject to change Datasheet TP65H050G4YS 650V SuperGaN® FET in TO-247 (source tab) .
The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

TP65H050G4YS Features

* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover loss Benefits
* Enable

TP65H050G4YS Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor D G KS S Cascode Schematic Symbol Cascode Device Structure Key Specifications VDSS (V) VDSS(TR)(V) RDS(on)eff (mΩ) max
* 650 800 60 QRR (nC) typ 120 QG (nC) typ 16
* Dynamic on-resistance; see Figures 18 and 1

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