Datasheet Specifications
- Part number
- TIM8596-8
- Manufacturer
- Toshiba ↗
- File Size
- 373.49 KB
- Datasheet
- TIM8596-8-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 6.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM8596-8 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power GTIM8596-8 Distributors
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