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TIM0910-15L MICROWAVE POWER GaAs FET

TIM0910-15L Description

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TIM0910-15L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-15L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM0910-15L-like datasheet