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TIM0910-30L MICROWAVE POWER GaAs FET

TIM0910-30L Description

MICROWAVE POWER GaAs FET TIM0910-30L .

TIM0910-30L Features

* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc (Min. ) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERI

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM0910-30L-like datasheet