Datasheet Specifications
- Part number
- TIM0910-30L
- Manufacturer
- Toshiba ↗
- File Size
- 266.08 KB
- Datasheet
- TIM0910-30L-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET TIM0910-30L .
Features
* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc (Min. ) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERITIM0910-30L Distributors
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