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TIM0910-4 MICROWAVE POWER GaAs FET

TIM0910-4 Description

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TIM0910-4 Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.5dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-4 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM0910-4-like datasheet