Datasheet Specifications
- Part number
- TIM0910-4
- Manufacturer
- Toshiba ↗
- File Size
- 377.31 KB
- Datasheet
- TIM0910-4-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.5dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-4 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point PowerTIM0910-4 Distributors
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