TH58NVG7T2ELA46 - 128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM

Toshiba

TH58NVG7T2ELA46 Datasheet Preview — Preview of TH58NVG7T2ELA46 PDF

Datasheet Details

Part number	TH58NVG7T2ELA46
Manufacturer	Toshiba ↗
File Size	611.09 KB
Description	128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM
Datasheet	TH58NVG7T2ELA46-Toshiba.pdf

TH58NVG7T2ELA46 Product details

Description

The TH58NVG7T2E is a single 3.3 V 128 Gbit (145,572,102,144bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 192 pages × 2780 blocks × 4.

Features

Organization Memory cell array Register Page size Block size TH58NVG7T2E 8568 × 521.3K × 8 x 4 8568 × 8 8568 bytes (1536K + 70.5K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase,Multi Page Copy, Mullti Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 10624 blocks Max 11120 blocks.
Power supply VCC = 2.7 V to 3.6 V VCCQ = 2.7 V to.

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Published: Dec 31, 2015 |