TH58NVG7D2GTA20 - 128 GBIT (8G x 8-BIT x 2) CMOS NAND E2PROM

Toshiba

TH58NVG7D2GTA20 Datasheet Preview — Preview of TH58NVG7D2GTA20 PDF

Datasheet Details

Part number	TH58NVG7D2GTA20
Manufacturer	Toshiba ↗
File Size	230.08 KB
Description	128 GBIT (8G x 8-BIT x 2) CMOS NAND E2PROM
Datasheet	TH58NVG7D2GTA20-Toshiba.pdf

TH58NVG7D2GTA20 Product details

Description

The TH58NVG7D2G is a single 3.3 V 128 Gbit (149,189,296,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes  256 pages  8248 blocks.

Features

Organization Memory cell array Register Page size Block size TH58NVG7D2G 8832  512K  8  2 8832  8 8832 bytes (2M  160 K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 7992 blocks Max 8248 blocks.
Power supply VCC  2.7 V to 3.6 V.
Access time Cell array to register.

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Published: Sep 1, 2015 |