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HN4B102J Silicon PNP/NPN Transistor

HN4B102J Description

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications * Smal.

HN4B102J Applications

* Switching Applications
* Small footprint due to a small and thin package
* High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)
* Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max) : NPN VCE (sat) = 0.14 V (max)
* H

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Silicon PNP NPN Transistor Toshiba
Toshiba HN4B102J-like datasheet