HN4B102J Silicon PNP/NPN Transistor

Toshiba

Description

HN4B102J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B102J MOS Gate Drive Applications Switching Applications * Smal.

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Datasheet Specifications

Part number: HN4B102J
Manufacturer: Toshiba ↗
File Size: 212.82 KB
Datasheet: HN4B102J-Toshiba.pdf
Description: Silicon PNP/NPN Transistor

Applications

* Switching Applications
* Small footprint due to a small and thin package
* High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A)
* Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max) : NPN VCE (sat) = 0.14 V (max)
* H

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HN4B102J Silicon PNP NPN Transistor Toshiba

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