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HN4B101J Silicon NPN/PNP Epitaxial Type Transistor

HN4B101J Description

HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications * Smal.

HN4B101J Applications

* Switching Applications
* Small footprint due to a small and thin package
* High DC current gain : hFE = 200 to 500 (IC =
* 0.12 A)
* Low collector-emitter saturation: PNP VCE (sat) =
* 0.20 V (max) : NPN VCE (sat) = 0.17 V (max)
* High-speed switching :

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Datasheet Details

Part number
HN4B101J
Manufacturer
Toshiba ↗
File Size
250.38 KB
Datasheet
HN4B101J-Toshiba.pdf
Description
Silicon NPN/PNP Epitaxial Type Transistor

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Silicon NPN PNP Epitaxial Type Transistor Toshiba
Toshiba HN4B101J-like datasheet