HN4B06J Silicon NPN/PNP Epitaxial Type Transistor

Toshiba

Description

HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Audio Frequency General Purpose .

📥 Download Datasheet

HN4B06J Datasheet Preview — Preview of HN4B06J PDF

Datasheet Specifications

Part number: HN4B06J
Manufacturer: Toshiba ↗
File Size: 545.17 KB
Datasheet: HN4B06J-Toshiba.pdf
Description: Silicon NPN/PNP Epitaxial Type Transistor

Applications

* Unit: mm Q1: z High voltage : VCEO =
* 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC =
* 0.1mA) / hFE (IC =
* 2mA) = 0.95 (typ. ) Q2: z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA

HN4B06J Distributors

📁 Related Datasheet

HN4064CG HN4065CG HN4066CG HN4068CG HN4400 HN4401

📌 All Tags

HN4B06J Silicon NPN PNP Epitaxial Type Transistor Toshiba

Toshiba HN4B06J-like datasheet