HN4A08J Silicon PNP Epitaxial Type Transistor

Toshiba

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J HN4A08J Low Frequency Power Amplifer Applications Power Switching Application U.

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Datasheet Specifications

Part number: HN4A08J
Manufacturer: Toshiba ↗
File Size: 223.97 KB
Datasheet: HN4A08J-Toshiba.pdf
Description: Silicon PNP Epitaxial Type Transistor

Applications

* Power Switching Application Unit: mm z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage : VCE(sat) =
* 0.4V (max) (IC =
* 500mA , IB =
* 20mA) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V

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HN4A08J Silicon PNP Epitaxial Type Transistor Toshiba

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