Datasheet Specifications
- Part number
- HN4B01JE
- Manufacturer
- Toshiba ↗
- File Size
- 339.96 KB
- Datasheet
- HN4B01JE-Toshiba.pdf
- Description
- Silicon NPN/PNP Epitaxial Type Transistor
Description
HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Audio Frequency General Purpos.
Applications
* Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ. ) Q2: z High voltage and high current : VCEO =HN4B01JE Distributors
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