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CUS10S30 - Schottky Barrier Diode

CUS10S30 Description

Schottky Barrier Diode Silicon Epitaxial CUS10S30 1.Applications * High-Speed Switching 2.Packaging and Internal Circuit CUS10S30 1: Catho.

CUS10S30 Applications

* High-Speed Switching 2. Packaging and Internal Circuit CUS10S30 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified c

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Schottky Barrier Diode Toshiba
Toshiba CUS10S30-like datasheet