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CUS05S40 - Schottky Barrier Diode

CUS05S40 Description

Schottky Barrier Diode Silicon Epitaxial CUS05S40 1.Applications * High-Speed Switching 2..

CUS05S40 Features

* (1) Small package (2) Low forward voltage: VF(2) = 0.56 V (typ. ) (@ IF = 500mA) 3. Packaging and Internal Circuit CUS05S40 USC 1: Cathode 2: Anode ©2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-11 2025-01-22 Rev.3.0 CUS05S40 4. Absolute Maximum

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Schottky Barrier Diode Toshiba
Toshiba CUS05S40-like datasheet