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CUS15S30 - Schottky Barrier Diode

CUS15S30 Description

Schottky Barrier Diode Silicon Epitaxial CUS15S30 1.Applications * High-Speed Switching 2..

CUS15S30 Features

* (1) Low forward voltage: VF(1) = 0.33 V (typ. ) 3. Packaging and Internal Circuit USC CUS15S30 1: Cathode 2: Anode Start of commercial production 2012-10 1 2014-04-07 Rev.3.0 CUS15S30 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating

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Schottky Barrier Diode Toshiba
Toshiba CUS15S30-like datasheet