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CUS10S40 - Schottky Barrier Diode

CUS10S40 Description

Schottky Barrier Diode Silicon Epitaxial CUS10S40 1.Applications * High-Speed Switching 2..

CUS10S40 Features

* (1) Small package (2) Low forward voltage: VF(2) = 0.45 V (typ. ) 3. Packaging and Internal Circuit USC CUS10S40 1: Cathode 2: Anode ©2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-09 2025-01-23 Rev.3.0 CUS10S40 4. Absolute Maximum Ratings (Note) (U

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Schottky Barrier Diode Toshiba
Toshiba CUS10S40-like datasheet