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TIM5964-80SL MICROWAVE POWER GaAs FET

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Description

MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-80SL TECHNICAL DATA .

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Features

* LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
* HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz
* HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz
* BROAD BAND INTERNALLY MATCHED FET
* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIF

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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