Datasheet Specifications
- Part number
- TIM5964-60SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 418.52 KB
- Datasheet
- TIM5964-60SL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-60SL RF PERFORMANCE SPECIFICATTIM5964-60SL Distributors
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