SSM3J16TE Datasheet - Toshiba Semiconductor

SSM3J16TE, Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J16TE www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching

Applications

* Analog Switch Applications Unit: mm
* Small package Low on-resistance : Ron = 8 Ω (max) (@VGS =
* 4 V) : Ron = 12 Ω (max) (@VGS =
* 2.5 V) : Ron = 45 Ω (max) (@VGS =
* 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source

SSM3J16TE_ToshibaSemiconductor.pdf