SSM3J16CT Datasheet - Toshiba Semiconductor

SSM3J16CT, Silicon P-Channel MOSFET

SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM3J16CT High Speed Switching

Applications

* Analog Switch Applications
* Small package
* Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS =
* 4 V) : RDS(ON) = 12 Ω (max) (@VGS =
* 2.5 V) : RDS(ON) = 45 Ω (max) (@VGS =
* 1.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

SSM3J16CT_ToshibaSemiconductor.pdf