GT8G136 Datasheet (Toshiba Semiconductor)

GT8G136, Silicon N-Channel IGBT

GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±6 ±8 150 1.1 0.6 150