Datasheet Details
Part number:
GT8G133
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
195.29 KB
Description:
Silicon n-channel igbt.
GT8G133-ToshibaSemiconductor.pdf
GT8G133-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT8G133
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
195.29 KB
Description:
Silicon n-channel igbt.
GT8G133, Silicon N-Channel IGBT
GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Compact and Thin (TSSOP-8) package Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation（t＝10 s） Junction temperature Storage temperatur
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