Datasheet Details
Part number:
GT8G132
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
382.41 KB
Description:
Silicon n-channel igbt.
GT8G132_ToshibaSemiconductor.pdf
GT8G132_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT8G132
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
382.41 KB
Description:
Silicon n-channel igbt.
GT8G132, Silicon N-Channel IGBT
www.DataSheet4U.com GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emit
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