GT8G151 Datasheet (Toshiba) - Silicon N-Channel IGBT

GT8G151, Silicon N-Channel IGBT

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 GT8G151 Strobe Flash Applications Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Pulse (N