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GT800N10

The GT800N10 is N-Channel Enhancement Mode Power MOSFET designed by GOFORD.

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Datasheet preview – GT800N10

Datasheet Details

Part number GT800N10, GT800N10L
Manufacturer GOFORD
File Size 787.83 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT800N10L-GOFORD.pdf
Note This datasheet PDF includes multiple part numbers: GT800N10, GT800N10L.
Please refer to the document for exact specifications by model.
Additional preview pages of the GT800N10 datasheet.

Product details

Description

The GT800N10L uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

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Other Datasheets by GOFORD
  • GT800N10L - N-Channel Enhancement Mode Power MOSFET
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