GT10Q301 Silicon N-Channel IGBT

Toshiba Semiconductor

GT10Q301 Description

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit:.

GT10Q301 Applications

* Motor Control Applications Unit: mm
* The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gat

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Datasheet Details

Part number: GT10Q301
Manufacturer: Toshiba ↗ Semiconductor
File Size: 168.53 KB
Datasheet: GT10Q301-ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

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Silicon N-Channel IGBT Toshiba Semiconductor

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