Datasheet4U Logo Datasheet4U.com

GT10Q301 Silicon N-Channel IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit:.

📥 Download Datasheet

Preview of GT10Q301 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* Motor Control Applications Unit: mm
* The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gat

GT10Q301 Distributors

📁 Related Datasheet

GT10 GT1003B GT100DA120U GT100DA60U GT100LA120UX GT100NA120UX

📌 All Tags

GT10Q301 Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT10Q301-like datasheet
GT10Q311
GT10Q101
GT10G131
GT10J301
GT10J303