GT10Q101 Silicon N-Channel IGBT

Toshiba Semiconductor

GT10Q101 Description

GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm *.

GT10Q101 Applications

* Unit: mm
* The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation

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Datasheet Details

Part number: GT10Q101
Manufacturer: Toshiba ↗ Semiconductor
File Size: 297.48 KB
Datasheet: GT10Q101_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

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Silicon N-Channel IGBT Toshiba Semiconductor

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