Datasheet4U Logo Datasheet4U.com

GT10Q101 Silicon N-Channel IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm *.

📥 Download Datasheet

Preview of GT10Q101 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* Unit: mm
* The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation

GT10Q101 Distributors

📁 Related Datasheet

GT10 GT1003B GT100DA120U GT100DA60U GT100LA120UX GT100NA120UX

📌 All Tags

GT10Q101 Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT10Q101-like datasheet
GT10Q301
GT10Q311
GT10G131
GT10J301
GT10J303