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XP162A12A6PR Power MOSFET

XP162A12A6PR Description

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package .
The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

XP162A12A6PR Features

* Low on-state resistance : Rds (on) = 0.17 Ω ( Vgs = -4.5V ) Rds (on) = 0.3 Ω ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V Gate protect diode built-in High density mounting : SOT - 89 u Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain S

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