XP1000-BD - GaAs MMIC Power Amplifier

Mimix Broadband

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Datasheet Details

Part number	XP1000-BD
Manufacturer	Mimix Broadband
File Size	303.19 KB
Description	GaAs MMIC Power Amplifier
Datasheet	XP1000-BD_MimixBroadband.pdf

XP1000-BD Product details

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 700 mA +0.3 VDC +9.0 dBm -65 to +165 OC -55 to MTTF Table 4 MTTF Table 4 (4) Channel temperature affects a device's MTTF.It is recommended to keep channel temperature as low as possible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input R

Features

High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1000 Mimix Broadband’s two stage 17.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to ac.

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Published: May 25, 2007 |