XP162A12A6PR-G Datasheet (Torex)

XP162A12A6PR-G, Power MOSFET

The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package

XP162A12A6PR-G Features

* Low On-State Resistance : Rds(on)=0.17Ω@Vgs=-4.5V : Rds(on)=0.3ΩVgs=-2.5V Ultra High-Speed Switching Driving Voltage : -2.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Package : SOT-89 21 2x

* PIN CONFIGURATION/ MARKING G：Gate S：Source D：Drain

* PRODUCT NAME