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XP162A11C0PR Power MOS FET

XP162A11C0PR Description

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.28 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package .
The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

XP162A11C0PR Features

* Low on-state resistance : Rds (on) = 0.15 Ω ( Vgs = -10V ) Rds (on) = 0.28 Ω ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V Gate protect diode built-in High density mounting : SOT - 89 Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Sour

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