Datasheet4U Logo Datasheet4U.com

TSM4806 - N-Channel Power MOSFET

Datasheet Summary

Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Features

  • Advanced High Cell Density Trench Technology.
  • Low Gate Charge. Block Diagram.

📥 Download Datasheet

Datasheet preview – TSM4806

Datasheet Details

Part number TSM4806
Manufacturer Taiwan Semiconductor
File Size 153.54 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM4806 Datasheet
Additional preview pages of the TSM4806 datasheet.

📁 Similar Datasheet

  • TSM4835 - 30V P-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM4872 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM4886 - 30V N-Channel MOSFET (30V N-Channel MOSFET)
  • TSM4 - Surface Mount Miniature Trimmers Multi-Turn Cermet (Vishay Siliconix)
  • TSM414K34 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM4392 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM4404 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM4405P - P-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM4410 - N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM4410D - 25V Dual N-Channel MOSFET (Taiwan Semiconductor Company)
Other Datasheets by Taiwan Semiconductor

Full PDF Text Transcription

Click to expand full text
TSM4806 20V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V 20 20 RDS(on) (max) VGS = 2.5V VGS = 1.8V 25 31 Qg 12.3 Unit V mΩ nC Features ● Advanced High Cell Density Trench Technology. ● Low Gate Charge. Block Diagram Application ● Networking DC-DC Power System. ● Load Switch. Ordering Information Part No. Package Packing TSM4806CS RLG SOP-8 2.5kpcs / 13” Reel Note: “G” denotes Halogen Free Product.
Published: |