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TSM4800N15CX6 - N-Channel Power MOSFET

Datasheet Summary

Features

  • Low RDS(ON) to minimize conductive losses.
  • Low gate charge for fast power switching.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.

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TSM4800N15CX6 Taiwan Semiconductor N-Channel Power MOSFET 150V, 1.4A, 480mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Battery Management System ● LED Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 150 V VGS = 10V 480 RDS(on) (max) mΩ VGS = 6V 520 Qg 8 nC SOT-26 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current (Note 1) TC = 25°C TA = 25°C ID 1.4 1.1 Pulsed Drain Current IDM 5.
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