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TSM4800N15CX6 N-Channel Power MOSFET

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Description

TSM4800N15CX6 Taiwan Semiconductor N-Channel Power MOSFET 150V, 1.4A, 480mΩ .

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Features

* Low RDS(ON) to minimize conductive losses
* Low gate charge for fast power switching
* Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Applications

* Battery Management System
* LED Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 150 V VGS = 10V 480 RDS(on) (max) mΩ VGS = 6V 520 Qg 8 nC SOT-26 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

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Taiwan Semiconductor TSM4800N15CX6-like datasheet