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TSM4835
Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain
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30V P-Channel Enhancement Mode MOSFET
VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ
Features
Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage
Block Diagram
Ordering Information
Part No. TSM4835CS Packing Tape & Reel Package SOP-8
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.
TSM4835 Datasheet
