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TSM4872 - 30V N-Channel MOSFET

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Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4872
Manufacturer Taiwan Semiconductor Company
File Size 228.97 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet TSM4872 Datasheet
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Preliminary www.DataSheet4U.com TSM4872 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 7.5 @ VGS = 10V 10 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 15 13 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch Ordering Information Part No. TSM4872CS RL Package SOP-8 Packing 2.
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