Datasheet4U Logo Datasheet4U.com

TGAN30N120FD Field Stop Trench IGBT

TGAN30N120FD Description

.

TGAN30N120FD Features

* 1200V Field Stop Trench Technology
* High Speed Switching
* Low Conduction Loss
* Positive Temperature Coefficient
* Easy parallel Operation
* RoHS compliant

TGAN30N120FD Applications

* : Induction Heating, Soft switching application TGAN30N120FD Field Stop Trench IGBT E GC Device TGAN30N120FD Package TO-3PN Marking TGAN30N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1)

📥 Download Datasheet

Preview of TGAN30N120FD PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
TGAN30N120FD
Manufacturer
TRinno
File Size
0.96 MB
Datasheet
TGAN30N120FD-TRinno.pdf
Description
Field Stop Trench IGBT

📁 Related Datasheet

  • TGA1045-EPU - Ku Band Power Amplifier (TriQuint Semiconductor)
  • TGA1055-EPU - Ka Band 2 Watt Power Amplifier (TriQuint Semiconductor)
  • TGA1071-EPU - 36 - 40 GHz Power Amplifier (TriQuint Semiconductor)
  • TGA1073A-SCC - 26- 34 GHz Medium Power Amplifier (TriQuint Semiconductor)
  • TGA1073B-SCC - 27-32 GHz 0.7 Watt Power Amplifier (TriQuint Semiconductor)
  • TGA1073C-SCC - 36 - 40 GHz Power Amplifier (TriQuint Semiconductor)
  • TGA1073G-SCC - 19 - 27 GHz Medium Power Amplifier (TriQuint Semiconductor)
  • TGA1081-EPU - 26-29 GHz Medium Power Amplifier (TriQuint Semiconductor)

📌 All Tags

Field Stop Trench IGBT TRinno
TRinno TGAN30N120FD-like datasheet