Click to expand full text
Advance Product Information
Ka Band 2 Watt Power Amplifier
Key Features and Performance
• • • • • • 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm
TGA1055-EPU
Primary Applications
• • • LMDS Point-to-Point Radio Satellite Ground Terminal
Release Status
• Currently shipping Engineering Prototype Units
EG1055B Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz
35 33 Output Power (dBm) & Gain (dB) 31 29 27 25 23 21 19 17 15 5 6 7 8 9 10 11 12 13 14 15 Input Power (dBm ) 20 18 16 14 12 10 8 6 4 2 0 Power Added Efficiency (%)
Pout Gain PAE
Chip Dimensions 5.89 mm x 3.
TGA1055-EPU Datasheet
