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STP601D - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the STP601D, a member of the STP601 P-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet preview – STP601D

Datasheet Details

Part number STP601D
Manufacturer Stanson Technology
File Size 390.99 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP601D Datasheet
Additional preview pages of the STP601D datasheet.

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Full PDF Text Transcription

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STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE -60V/-20.0A, RDS(ON) = 20mΩ(typ.) @VGS = -10V -60V/-20.0A, RDS(ON) = 27mΩ @VGS = -4.
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