STP35N10- N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Gr Pr
STP60L60F
Ver 1.0
SamHop Microelectronics Corp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
ID
32A
R DS(ON) (m Ω) Typ
15 @ VGS=10V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package.
D
G D S
G
STF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy
d b a
Limit 60 ±20 T C =25 °C T C =70 °C 32 26.