Datasheet4U Logo Datasheet4U.com

ST2341SRG - P-Channel Enhancement Mode MOSFET

Description

ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such a

📥 Download Datasheet

Datasheet preview – ST2341SRG

Datasheet Details

Part number ST2341SRG
Manufacturer Stanson Technology
File Size 668.50 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2341SRG Datasheet
Additional preview pages of the ST2341SRG datasheet.

📁 Similar Datasheet

  • ST2341S23RG - P-Channel MOSFET (VBsemi)
  • ST2341 - P-Channel Enhancement Mode MOSFET (Stanson)
  • ST2341A - P-Channel Enhancement Mode MOSFET (Stanson)
  • ST2342 - N-Channel Enhancement Mode MOSFET (Stanson)
  • ST2349 - 4-bit dual supply level translator (STMicroelectronics)
  • ST2349A - 4-bit dual supply level translator (STMicroelectronics)
  • ST2302 - N-Channel MOSFET (VBsemi)
  • ST230C - PHASE CONTROL THYRISTORS (IRF)
  • ST230C04C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230C08C - PHASE CONTROL THYRISTORS (International Rectifier)
Other Datasheets by Stanson Technology
  • ST2341S23RG - P-Channel Enhancement Mode MOSFET
  • ST2300 - N-Channel Enhancement Mode MOSFET
  • ST2300SRG - N-Channel Enhancement Mode MOSFET
  • ST2301 - P Channel Enchancement Mode MOSFET
  • ST2301A - P-Channel Enhancement Mode MOSFET
  • ST2302 - 3.6A N-Channel Enchancement Mode MOSFET
  • ST2303 - P Channel Enchancement Mode MOSFET
  • ST2303SRG - P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE ! -20V/-3.2A, RDS(ON) =45mΩ (Typ.) @VGS = -4.5V ! -20V/-2.0A, RDS(ON) = 53mΩ @VGS = -2.
Published: |