ST2301A
DESCRIPTION
ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
FEATURE
-20V/-3.2A, RDS(ON) =85mΩ (Typ.) @VGS = -4.5V
-20V/-2.0A, RDS(ON) = 100mΩ @VGS = -2.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING SOT-23
S01YA
Y: Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech.
ST2301A 2005. V1
P Channel Enhancement...
