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ST2309ES
P Channel Enhancement Mode MOSFET
-3.0A
DESCRIPTION
ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D
G
S
1
2
FEATURE
! -60V/-3.0A, RDS(ON) = 160m-ohm @VGS = -10V
! -60V/-1.5A, RDS(ON) = 200m-ohm @VGS = -4.
ST2309ES Datasheet
