ST2300SRG
DESCRIPTION
The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
1.Gate 2.Source 3.Drain
FEATURE
20V/6.0A, RDS(ON) = 35mΩ (Typ.) @VGS = 10V
20V/5.0A, RDS(ON) = 48mΩ @VGS = 4.5V
20V/4.5A, RDS(ON) = 90mΩ @VGS = 2.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability SOT-23 package design
PART MARKING SOT-23
42YA
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
SOT-23
※ Process Code : A ~ Z ; a ~ z ※ ST2300SRG ; S :...
