ST2342
DESCRIPTION
ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z z z S 2 2.Source 3.Drain z z http://..net/
3 D G 1 1.Gate z
20V/4.8A, RDS(ON) = 26mΩ (Typ.) @VGS = 4.5V 20V/4.5A, RDS(ON) = 28mΩ @VGS = 2.5V 20V/4.0A, RDS(ON) = 36mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
PART MARKING SOT-23-3L
42YA
1 Y: Year Code 2 A: Process Code
ORDERING INFORMATION Part Number ST2342S23RG Package SOT-23L Part Marking...
