SSF2816EB Datasheet - Silikron Semiconductor

SSF2816EB, MOSFET

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.7

Features

* VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2500V HBM
* High Power and current handling capability
* Lead free product is acquired
* Surface Mount Package Schematic diagram Marking and pin Assig

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material dam age. Consult with your Silikron representative nearest you before using any Si

SSF2816EB-SilikronSemiconductor.pdf