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SSF2816EBK - Dual N-Channel MOSFET

Download the SSF2816EBK datasheet PDF. This datasheet also covers the SSF2816EBK-GOOD variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

  • VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package Schematic Diagram Marking and Pin Assignment.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF2816EBK-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF2816EBK
Manufacturer GOOD-ARK
File Size 457.54 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SSF2816EBK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2816EBK 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.
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