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SSF2810EH2 - MOSFET

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • TSSOP-8.
  • Advanced MOSFET process technology.
  • Ultra low on-resistance with low gate charge.
  • High Power and current handing capability.
  • 150℃ operating temperature.
  • G/S ESD protect 2KV (HBM) SSF2810EH2 Marking and Pin Assignments Schematic Diagram.

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Datasheet Details

Part number SSF2810EH2
Manufacturer Silikron Semiconductor
File Size 793.26 KB
Description MOSFET
Datasheet download datasheet SSF2810EH2 Datasheet

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Full PDF Text Transcription

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Main Product Characteristics: VDSS 20V RDS(on) 10mΩ (typ.) ID 8A① Features and Benefits: TSSOP-8  Advanced MOSFET process technology  Ultra low on-resistance with low gate charge  High Power and current handing capability  150℃ operating temperature  G/S ESD protect 2KV (HBM) SSF2810EH2 Marking and Pin Assignments Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
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