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SSF2816EB - Dual N-Channel MOSFET

Download the SSF2816EB datasheet PDF. This datasheet also covers the SSF2816EB-GOOD variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.

Features

  • VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2500V HBM.
  • High Power and current handling capability.
  • Lead free product.
  • Surface Mount Package Schematic Diagram Marking and Pin Assignment.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF2816EB-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF2816EB
Manufacturer GOOD-ARK
File Size 477.35 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SSF2816EB Datasheet

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Full PDF Text Transcription

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DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. SSF2816EB 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.
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